2SK3656 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type VHF- and UHF-band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3656
2SK3656
VHF- and UHF-band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
Unit: mm
• Output power: P_O =28.4dBmW (typ)
• Gain: G_P = 15.4dB (typ)
• Drain efficiency: η_D = 64% (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
7.5
V
Gain-source voltage
V_GSS(Note 1)
3.5
V
Drain current
I_D
0.5
A
Power dissipation
P_D (Note 2)
3
W
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−45~150
°C
JEDEC
JEITA
⎯
SC-62
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-5K1D
Weight: 0.05 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Operating Ranges: 0~3.5V
Note 2: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Part No. (or abbreviation code)
WC
Lot No.
123
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01