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2SK364_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications | |||
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK364
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SK364
Unit: mm
⢠High breakdown voltage: VGDS = â40 V
⢠High input impedance: IGSS = â1.0 nA (max) (VGS = â30 V)
⢠Low RDS (ON): RDS (ON) = 50 ⦠(typ.) (IDSS = 5 mA)
⢠Complementary to 2SJ104
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
VGDS
IG
PD
Tj
Tstg
â40
V
10
mA
400
mW
125
°C
â55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
TO-92
temperature, etc.) may cause this product to decrease in the
JEITA
SC-43
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-5F1D
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Weight: 0.21 g (typ.)
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
VGS = â30 V, VDS = 0
â¯
⯠â1.0 nA
V (BR) GDS VDS = 0, IG = â100 μA
â40 â¯
â¯
V
IDSS
VDS = 10 V, VGS = 0
(Note 1)
2.6
â¯
20
mA
VGS (OFF) VDS = 10 V, ID = 0.1 μA
â0.2
â¯
â1.5
V
âªYfsâª
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 12
28
â¯
mS
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
â¯
30
â¯
pF
Crss
VDG = 10 V, ID = 0, f = 1 MHz
â¯
6
â¯
pF
RDS (ON) VDS = 10 mV, VGS = 0
(Note 2) â¯
50
â¯
Ω
Note 1: IDSS classification GR: 2.6~6.5 mA, BL: 6~12 mA, V: 10~20 mA
Note 2: Condition of the typical value IDSS = 5 mA
1
2007-11-01
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