2SK3566 Datasheet, PDF (1/6 Pages) Hitachi Semiconductor – Switching Regulator Applications

2SK3566
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV)
2SK3566
Switching Regulator Applications
• Low drain-source ON resistance: R_{DS (ON)} = 5.6Ω (typ.)
• High forward transfer admittance: |Y_fs| = 2.0 S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 720 V)
• Enhancement-mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
2.5
A
7.5
40
W
216
mJ
2.5
A
4
mJ
150
°C
-55~150
°C
1: Gate
2: Drain
3: Source
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10U1B
Weight : 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
3.125
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
62.5
°C/W
1
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 63.4 mH, I_AR = 2.5 A, R_G = 25 Ω
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
3
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2006-11-10