2SK3563 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

TENTATIVE
2SK3563
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ)
2SK3563
Switching Regulator Applications
unit：ｍｍ
• Low drain-source ON resistance: R_{DS (ON)} = 1.35Ω (typ.)
• High forward transfer admittance: |Y_fs| = 3.5S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 500 V)
• Enhancement-mode: V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
10±0.3
φ3.2±0.2
2.7±0.2
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Thermal Characteristics
Rating
Unit
500
V
500
V
±30
V
5
A
20
35
W
180
mJ
5
A
3.5
mJ
150
°C
-55~150
°C
1.1
1.1
0.69±0.15
2.54±0.25
2.54±0.25
123
1. Gate
2. Drain
3. Source
JEDEC
―
JEITA
―
TOSHIBA ―
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
3.57
°C/W
Thermal resistance, channel to ambient
R_{th (ch-a)}
62.5
°C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C(initial), L = 12.2 mH, I_AR = 5 A, R_G = 25 Ω
1
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
3
1
2003-01-27