2SK3497_09 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – High Power Amplifier Application

2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
z High breakdown voltage: V_DSS = 180 V
z Complementary to 2SJ618
Unit: mm
15.9 MAX.
Ф3.2 ± 0.2
Maximum Ratings (Ta = 25°C)
2.0 ± 0.3
1.0
＋0.3
－0.25
5.45 ± 0.2
5.45 ± 0.2
Characteristics
Symbol
Rating
Unit
123
Drain−source voltage
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
180
V
±12
V
10
A
30
A
130
W
150
°C
−55 to 150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
0.96
°C / W
2
Thermal resistance, channel to
ambient
R_{th (ch−a)}
50
°C / W
1
3
1
2009-01-27