2SK3497_06 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type High Power Amplifier Application

2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
z High breakdown voltage: VDSS = 180V
z Complementary to 2SJ618
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
180
V
±12
V
10
A
30
A
130
W
150
°C
−55~150
°C
Note 1: Ensure that the channel temperature does not exceed 150°C.
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch−c)}
0.96
°C / W
Thermal resistance, channel to
ambient
R_{th (ch−a)}
50
°C / W
1
3
1
2006-11-20