2SK3497 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Power Amplifier Application

2SK3497
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3497
High Power Amplifier Application
Unit: mm
High breakdown voltage
Complementary to 2SJ618
: VDSS = 180V
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Gate−source voltage
Drain current
DC (Note )
Pulse (Note )
Drain power dissipation (Tc = 25°C)
Channel temperature
Storage temperature range
V_DSS
V_GSS
I_D
I_DP
P_D
T_ch
T_stg
180
V
±12
V
10
A
30
A
130
W
150
°C
−55~150
°C
Note : Please use devices on condition that the channel temperature is
below 150°C.
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Symbol
R_{th (ch−c)}
R_{th (ch−a)}
Max
Unit
0.96
°C / W
50
°C / W
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
2
1
3
1
2003-07-16