2SK3476 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3476
VHF- and UHF-band Amplifier Applications
2SK3476
Unit: mm
· Output power: PO = 7.0 W (min)
· Gain: GP = 11.4dB (min)
· Drain efficiency: ηD = 60% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
20
V
V_GSS
±5
V
I_D
3
A
P_D (Note 1)
20
W
T_ch
150
°C
T_stg
−45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
2
Type name
UC F
1
3
**
Dot
Lo No.
1. Gate
2. Source (heat sink)
3. Drain
JEDEC
JEITA
TOSHIBA
―
―
2-5N1A
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2002-01-09