2SK3475 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – VHF-and UHF-band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3475
VHF- and UHF-band Amplifier Applications
2SK3475
Unit: mm
· Output power: PO = 630 mW (min)
· Gain: GP = 14.9dB (min)
· Drain efficiency: ηD = 45% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gain-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
20
V
V_GSS
±5
V
I_D
1
A
P_D (Note 1)
3
W
T_ch
150
°C
T_stg
−45~150
°C
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Type name
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1D
WB
123
1. Gate
2. Source
3. Drain
Caution
Please take care to avoid generating static electricity when handling this transistor.
1
2002-01-09