2SK3472 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator Applications

2SK3472
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3472
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 0.8 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
• Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit: mmç
Maximum Ratings (Tc = 25°C)ç
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
450
V
450
V
±30
V
1
A
2
A
20
W
122
mJ
1
A
2
mJ
150
°C
−55 to150
°C
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 203 mH, R_G = 25 Ω, I_AR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-03-04