2SK3466 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor

2SK3466
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3466
Chopper Regulator
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.)
· High forward transfer admittance: ïYfsï = 4.0 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC
Pulse
(Note 1)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Thermal Characteristics
Rating
Unit
500
V
500
V
±30
V
5
A
20
50
W
180
mJ
5
A
5
mJ
150
°C
-55 to 150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Characteristics
Symbol
Max
Unit
4
Thermal resistance, channel to case
R_{th (ch-c)}
2.5
°C/W
Note 1: Please use devises on condition that the channel temperature
1
is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 12.2 mH, R_G = 25 W,
I_AR = 5 A
3
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-02-06