2SK3445 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator, DC-DC Converter Applications Motor Drive Applications

2SK3445
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3445
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 90 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 10 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 250 V)
· Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
250
V
250
V
±30
V
20
A
80
125
W
487
mJ
20
A
12.5
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 2.06 mH, I_AR = 20 A, R_G = 25 W
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1
2002-09-04