2SK3444 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator, DC-DC Converter Applications Motor Drive Applications

2SK3444
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 100 µA (VDS = 200 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
200
V
200
V
±30
V
25
A
100
125
W
488
mJ
25
A
12.5
mJ
150
°C
−55 to 150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R_{th (ch-c)}
Max
1.00
Unit
°C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Note 1: Ensure that the channel temperature does not exceed 150°C.
4
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 1.26 mH, I_AR = 25 A, R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
Marking
2
3
K3444
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06