2SK3442 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)

2SK3442
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3442
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
· High forward transfer admittance: ïYfsï = 28 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 100 V)
· Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
100
V
100
V
±30
V
45
A
180
125
W
468
mJ
45
A
12.5
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
4
Note 2 V_DD = 25 V, T_ch = 25°C (initial), L = 373 mH, R_G = 25 W, I_AR = 45 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
1
This transistor is an electrostatic sensitive device. Please handle with caution.
2
3
1
2002-08-29