2SK3440 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator, DC-DC Converter Applications Motor Drive Applications

2SK3440
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3440
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mmç
• Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 30 S (typ.)
• Low leakage current: IDSS = 100 µA (VDS = 60 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C) ç
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
60
V
Drain-gate voltage (R_GS = 20 kΩ)
V_DGR
60
V
Gate-source voltage
V_GSS
±30
V
Drain current
DC (Note 1)
I_D
Pulse (Note 1)
I_DP
50
A
200
Drain power dissipation
P_D
125
W
Single pulse avalanche energy (Note 2)
E_AS
644
mJ
Avalanche current
I_AR
50
A
Repetitive avalanche energy (Note 3)
E_AR
12.5
mJ
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
−55 to 150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Notice:
Thermal resistance, channel to case
R_{th (ch-c)}
1.00
°C/W
Please use the S1 pin for gate input
signal return. Make sure that the
Note 1: Please use devices on condition that the channel temperature
main current flows into S2 pin.
is below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 350 µH, R_G = 25 Ω, I_AR = 50 A
4
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
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2002-03-04