2SK3439 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – DC-DC Converter Relay Drive and Motor Drive Applications

2SK3439
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3439
DC-DC Converter
Relay Drive and Motor Drive Applications
Unit: mmç
• Low drain-source ON resistance: RDS (ON) = 3.8 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 70 S (typ.)
• Low leakage current: IDSS = 100 µA (max) (VDS = 30 V)
• Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C) ç
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t ^<= 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
30
V
30
V
±20
V
75
A
300
125
W
731
mJ
75
A
12.5
mJ
150
°C
−55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.00
°C/W
Note 1: Please use devices on conditions that the channel temperature
is below 150°C.
Note 2:
Note 3:
V_DD = 24 V, T_ch = 25°C (initial), L = 100 µH, R_G = 25 Ω,
I_AR = 75 A
Repetitive rating; pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device. Please handle with
caution.
Marking
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
4
1
2
3
K3439
˞
˞ Lot Number
Type
Month (starting from alphabet A)
Year (last number of the christian era)
1
2001-12-11