2SK3407 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

2SK3407
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3407
Switching Regulator Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.)
· High forward transfer admittance: |Yfs| = 7.5 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)
· Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
450
V
450
V
±30
V
10
A
40
40
W
222
mJ
10
A
4
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
3.125
62.5
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 3.7 mH, R_G = 25 W, I_AR = 10 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-12