2SK3397 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

2SK3397
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSᶘ)
2SK3397
Relay Drive and DC-DC Converter Applications
Motor Drive Applications
Unit: mmç
• Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.)
• High forward transfer admittance: Yfs = 110 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement-model: Vth = 1.5 to 3.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)ç
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
30
V
30
V
±20
V
70
A
210
125
W
273
mJ
70
A
12.5
mJ
150
°C
−55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.0
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V_DD = 25 V, T_ch = 25°C (initial), L = 40 µH, I_AR = 70 A,
R_G = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
4
1
3
1
2002-02-27