2SK3388 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3388
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3388
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 82 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 20 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 250 V)
· Enhancement-mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC
(Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
250
V
250
V
±20
V
20
A
60
125
W
487
mJ
20
A
12.5
mJ
150
°C
-55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 2.06 mH, I_AR = 20 A,
R_G = 25 W
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
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2
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2002-02-06