2SK3387_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

2SK3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²-π-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• 4-V gate drive
• Low drain-source ON resistance: R_{DS (ON)} = 0.08 Ω(typ.)
• High forward transfer admittance: ⎪Y_fs⎪ = 17 S (typ.)
• Low leakage current: I_DSS = 100 μA (V_DS = 150 V)
• Enhancement mode: V_th = 0.8~2.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
150
V
150
V
±20
V
18
A
54
100
W
176
mJ
18
A
10
mJ
150
°C
−55~150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R_{th (ch-c)}
1.25
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 800 μH, R_G = 25 Ω, I_AR = 18 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into S2 pin.
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2006-11-20