2SK3387 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV)

2SK3387
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L²-F-MOSV)
2SK3387
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
· 4 V gate drive
· Low drain-source ON resistance: RDS (ON) = 0.08 Ω(typ.)
· High forward transfer admittance: ïYfsï = 17 S (typ.)
· Low leakage current: IDSS = 100 µA (VDS = 150 V)
· Enhancement-mode: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
150
V
150
V
±20
V
18
A
54
100
W
176
mJ
18
A
10
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
R_{th (ch-c)}
Notice:
Max
Unit
Please use the S1 pin for gate input
signal return. Make sure that the
1.25
°C/W
main current flows into S2 pin.
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
4
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 800 mH, R_G = 25 W, I_AR = 18 A
Note 3: Repetitive rating: pulse width limited by max junction temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
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2002-07-22