2SK3376TV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For ECM

2SK3376TV
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TV
• Application for Ultra-compact ECM
1.2±0.05
0.8±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
Gate Current
Drain power dissipation (Ta = 25°C)
Junction Temperature
Storage temperature range
V_GDO
I_G
P_D
T_j
T_stg
-20
V
10
mA
100
mW
125
°C
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
IDSS CLASSIFICATION
A-Rank 80 to 200µA
B-Rank 170 to 300µA
C-Rank 270 to 480µA
BK-Rank 150 to 350µA
1
2
3
VESM2
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1H1A
Weight: 0.8mg (typ.)
Marking
3
□
Type Name
Top Gate
Lot Code
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
C :C-Rank
Equivalent Circuit
D
G
S
Precaution
There is a metal plate on the top of package, which has the same electrical potential as the Gate terminal. Don’t use
it as a terminal.
1
2007-11-01