2SK3376MFV Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For ECM

2SK3376MFV
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376MFV
• Application for Ultra-compact ECM
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-Drain voltage
V_GDO
-20
V
Gate Current
I_G
10
mA
Drain power dissipation (Ta = 25°C) P_D (Note 1)
150
mW
Junction Temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Note 1: Mounted on FR4 board
0.5mm
0.45mm
0.45mm
0.4mm
1.2±0.05
0.8±0.05
1
3
2
VESM
1.Drain
2.Source
3.Gate
JEDEC
-
JEITA
-
TOSHIBA
2-1L1C
Weight: 1.5mg (typ.)
IDSS CLASSIFICATION
A-Rank 80 to 200µA
B-Rank 170 to 300µA
C-Rank 270 to 480µA
BK-Rank 150 to 350µA
Marking
Type Name
3
IDSS Classification Symbol
A :A-Rank
B :B-Rank , BK-Rank
C :C-Rank
1
Equivalent Circuit
D
G
S
2007-11-01