2SK3373 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Switching Regulator and DC-DC Converter Applications

2SK3373
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3373
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 2.9 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 1.7 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 500 V)
· Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
DC
(Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
500
V
500
V
±30
V
2
5
A
12
20
W
112
mJ
2
A
2
mJ
150
°C
-55 to150
°C
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
°C/W
125
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 48.4 mH, R_G = 25 W, I_AR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-09-02