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2SK3342_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Unit: mm
z Low drain-source ON resistance
: RDS (ON) = 0.8 Ω (typ.)
z High forward transfer admittance : |Yfs| = 4.5 S (typ.)
z Low leakage current : IDSS = 100 μA (max) (VDS = 250 V)
z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
250
V
250
V
±20
V
4.5
A
18
A
20
W
51
mJ
4.5
A
2.0
mJ
150
°C
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
6.25
°C / W
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 4.28 mH, RG = 25 Ω,
IAR = 4.5 A
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2007-01-16