2SK3342 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

2SK3342
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3342
Switching Regulator Applications DC−DC Converter, and
Motor Drive Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.)
l High forward transfer admittance : |Yfs| = 4.5 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
250
V
250
V
±20
V
4.5
A
18
A
20
W
51
mJ
4.5
A
2.0
mJ
150
°C
−55~150
°C
Thermal Characteristics
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
6.25
°C / W
125
°C / W
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 4.28 mH, R_G = 25 Ω,
I_AR = 4.5 A
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2002-01-25