2SK3320_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3320
2SK3320
For Low Noise Audio Amplifier Applications
• Two devices in a ultra super mini (five pins) package
• High |Y_fs|: |Y_fs| = 15 mS (typ.) (V_DS = 10 V, V_GS = 0)
• High breakdown voltage: V_GDS = −50 V
• Super low noise: NF = 1.0dB (typ.)
(V_DS = 10 V, I_D = 0.5 mA, f = 1 kHz, R_G = 1 kΩ)
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 common)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
V_GDS
−50
V
Gate current
I_G
10
mA
Drain power dissipation
Junction temperature
Storage temperature range
P_D
200
mW
(Note 1)
T_j
125
°C
T_stg
−55~125
°C
JEDEC
JEITA
TOSHIBA
―
―
2-2L1B
Note: Using continuously under heavy loads (e.g. the application of
Weight: 6.2 mg (typ.)
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
Marking
Pin Assignment (top view)
1
2007-11-01