2SK3314_06 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Chopper Regulator and DC−DC Converter Applications Motor Drive Applications

2SK3314
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3314
Chopper Regulator and DC−DC Converter Applications
Motor Drive Applications
z Fast reverse recovery time
: t_rr = 105 ns (typ.)
z Built-in high-speed free-wheeling diode
z Low drain−source ON resistance : R_{DS (ON)} = 0.35 Ω (typ.)
z High forward transfer admittance : |Y_fs| = 9.9 S (typ.)
z Low leakage current : I_DSS = 100 μA (max) (V_DS = 500 V)
z Enhancement mode : V_th = 2.0~4.0 V (V_DS = 10 V, I_D = 1 mA)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
15
A
60
A
150
W
630
mJ
15
A
15
mJ
150
°C
−55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.833
50
°C / W
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.76 mH, R_G = 25 Ω, I_AR = 15 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostaticsensitive device.
Please handle with caution.
1
2006-11-06