|
2SK3314 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV) | |||
|
2SK3314
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (ÏâMOSV)
2SK3314
Chopper Regulator, DCâDC Converter Applications
Motor Drive Applications
Unit: mm
l Fast reverse recovery time
: trr = 105 ns (typ.)
l Builtâin highâspeed freeâwheeling diode
l Low drainâsource ON resistance : RDS (ON) = 0.35 ⦠(typ.)
l High forward transfer admittance : |Yfs| = 9.9 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
l Enhancementâmode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainâsource voltage
Drainâgate voltage (RGS = 20 kâ¦)
Gateâsource voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
500
V
500
V
±30
V
15
A
60
A
150
W
630
mJ
15
A
15
mJ
150
°C
â55~150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
â
JEITA
â
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (châc)
Rth (châa)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 4.76 mH, RG = 25 â¦, IAR = 15 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-01-25
|
▷ |