2SK330_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK330
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
2SK330
Unit: mm
• High breakdown voltage: V_GDS = −50 V
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
• Low R_{DS (ON)}: R_{DS (ON)} = 320 Ω (typ.) (I_DSS = 5 mA)
• Complementary to 2SJ105
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
V_GDS
−50
V
Gate current
I_G
10
mA
Drain power dissipation
P_D
200
mW
Junction temperature
Storage temperature range
T_j
125
°C
T_stg
−55~125
°C
Note:
Using continuously under heavy loads (e.g. the application of
JEDEC
―
high temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-4E1B
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.13 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
I_GSS
V _{(BR) GDS}
V_GS = −30 V, V_DS = 0
V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)}
⎪Y_fs⎪
R_DS (ON)
C_iss
C_rss
V_DS = 10 V, I_D = 0.1 μA
V_DS = 10 V, V_GS = 0, f = 1 kHz
V_DS = 10 mV, V_GS = 0, I_DSS = 5 mA
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_GD = −10 V, I_D = 0, f = 1 MHz
Note: I_DSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Min Typ. Max Unit
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
1.2
⎯
14
mA
−0.7
⎯
−6.0
V
1.5
4
⎯
mS
⎯ 320 ⎯
Ω
⎯
9.0
⎯
pF
⎯
2.5
⎯
pF
1
2007-11-01