2SK3301_06 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulatorand DC-DC Converter Applications

2SK3301
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII)
2SK3301
Switching Regulatorand DC-DC Converter Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 15 Ω (typ.)
• High forward transfer admittance: |Y_fs| = 0.65 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 720 V)
• Enhancement mode: V_th = 2.4~3.4 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
900
V
900
V
±30
V
1
A
2
20
W
140
mJ
1
A
2.0
mJ
150
°C
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
6.25
125
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 257 mH, R_G = 25 Ω,
I_AR = 1 A
Note 3: Repetitive rating: pulse width limited by max junction
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
1
2006-11-10