2SK3265 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (CHOPPER GEGULATORS DC-DC CONVERTER, AND MOTOR DRIVE APPLICATIONS)

2SK3265
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3265
Chopper Regulators DC−DC Converter, and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 0.72 Ω (typ.)
l High forward transfer admittance : |Yfs| = 7.0 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 700 V)
l Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
700
V
700
V
±30
V
10
A
30
A
45
W
420
mJ
10
A
4.5
mJ
150
°C
−55~150
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
2.78
°C / W
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 7.5 mH, R_G = 25 Ω, I_AR = 10 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1
2002-06-05