2SK3236 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

2SK3236
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3236
Switching Regulator Applications, DC-DC Converter and
Motor Drive Applications
Unit: mm
· 4 V gate drive
· Low drain-source ON resistance: RDS (ON) = 13.5 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 42 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-model: Vth = 1.3~2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
60
V
60
V
±20
V
35
A
105
30
W
68
mJ
35
A
3.0
mJ
150
°C
-55~150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
4.16
62.5
°C/W
°C/W
Note 1: Please use devises on condition that the channel temperature is below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C, L = 40 mH, R_G = 25 W, I_AR = 35 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution
1
2002-08-12