2SK3176_07 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type Switching Regulator, DC-DC Converter and Motor Drive Applications

2SK3176
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS V)
2SK3176
Switching Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 38 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 30 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 200 V)
• Enhancement-mode: V_th = 1.5 to 3.5 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
200
V
200
V
±20
V
30
A
120
150
W
925
mJ
30
A
15
mJ
150
°C
−55 to 150
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
⎯
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 50 V, T_ch = 25°C (initial), L = 1.66 mH, R_G = 25 Ω, I_AR = 30 A
Note 3: Repetitive rating: pulse width limited by maximum junction temperature.
Note 4:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change
in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R_{th (ch-c)}
R_{th (ch-a)}
Max Unit
0.833 °C/W
50.0 °C/W
1
2007-03-16