2SK3131 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Field Effect Transistor Silicon N Channel MOS Type

2SK3131
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3131
Chopper Regulator DC−DC Converter and Motor Drive
Applications
Unit: mm
Fast reverse recovery time
: trr = 105 ns (typ.)
Built-in high-speed free-wheeling diode
Low drain−source ON resistance : RDS (ON) = 0.085 Ω (typ.)
High forward transfer admittance : |Yfs| = 35 S (typ.)
Low leakage current : IDSS = 100 µA (max) (VDS = 500 V)
Enhancement mode : Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
DC Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
500
V
500
V
±30
V
50
A
200
A
250
W
525
mJ
50
A
25
mJ
150
°C
−55~150
°C
JEDEC
—
JEITA
—
TOSHIBA
2-21F1B
Weight: 9.75 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
0.5
°C / W
35.7
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 357 µH, R_G = 25 Ω, I_AR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2004-07-06