2SK3127_09 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK3127
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOS VI)
2SK3127
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
• Low drain-source ON resistance: R_{DS (ON)} = 9.5 mΩ (typ.)
• High forward transfer admittance: |Y_fs| = 38 S (typ.)
• Low leakage current: I_DSS = 100 μA (max) (V_DS = 30 V)
• Enhancement-mode: V_th = 1.5 to 3.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
30
V
30
V
±20
V
45
A
135
65
W
524
mJ
45
A
6
mJ
150
°C
−55 to 150
°C
Note 1:
Note 2:
Note 3:
Note 4:
Please use devices on condition that the channel temperature is
below 150°C.
V_DD = 25 V, T_ch = 25°C (initial), L = 186 μH, R_G = 25 Ω, I_AR = 45 A
Repetitive rating: pulse width limited by maximum junction
temperature.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Symbol
R_{th (ch-c)}
R_{th (ch-a)}
Max Unit
1.92 °C/W
83.3 °C/W
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2009-09-29