2SK30ATM Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – N CHANNEL JUNCTION TYPE (LOW NOISE PRE-AMPLIFIER, TONE CONTROL AMPLIFIER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS)

2SK30ATM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK30ATM
Low Noise Pre-Amplifier, Tone Control Amplifier and
DC-AC High Input Impedance Amplifier Circuit
Applications
Unit: mm
• High breakdown voltage: V_GDS = −50 V
• High input impedance: I_GSS = −1 nA (max) (V_GS = −30 V)
• Low noise: NF = 0.5dB (typ.)
(V_DS = 15 V, V_GS = 0, R_G = 100 kΩ, f = 120 Hz)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
V_GDS
−50
V
Gate current
I_G
10
mA
Drain power dissipation
P_D
100
mW
Junction temperature
T_j
125
°C
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of
JEDEC
TO-92
high temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5F1C
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Weight: 0.21 g (typ.)
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Noise figure
I_GSS
V _{(BR) GDS}
V_GS = −30 V, V_DS = 0
V_DS = 0, I_G = −100 μA
I_DSS
V_DS = 10 V, V_GS = 0
(Note)
V_{GS (OFF)}
⎪Y_fs⎪
C_iss
C_rss
NF
V_DS = 10 V, I_D = 0.1 μA
V_DS = 10 V, V_GS = 0, f = 1 kHz
V_GS = 0, V_DS = 0, f = 1 MHz
V_GD = −10 V, V_DS = 0, f = 1 MHz
V_DS = 15 V, V_GS = 0
R_G = 100 kΩ, f = 120 Hz
⎯
⎯ −1.0 nA
−50 ⎯
⎯
V
0.3
⎯
6.5 mA
−0.4
⎯
−5.0
V
1.2
⎯
⎯
mS
⎯
8.2
⎯
pF
⎯
2.6
⎯
pF
⎯
0.5
5.0
dB
Note: I_DSS classification R: 0.30~0.75, O: 0.60~1.40, Y: 1.20~3.00, GR: 2.60~6.50
1
2007-11-01