2SK3085 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator, DC-DC Converter and Motor Drive Applications

2SK3085
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (F-MOSV)
2SK3085
Chopper Regulator, DC-DC Converter and Motor Drive
Applications
Unit: mm
· Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)
· High forward transfer admittance: |Yfs| = 3 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 600 V)
· Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (R_GS = 20 kW)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
Rating
Unit
600
V
600
V
±30
V
3.5
A
14
75
W
227
mJ
3.5
A
7.5
mJ
150
°C
-55~150
°C
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
R_{th (ch-c)}
R_{th (ch-a)}
1.67
°C/W
83.3
°C/W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C, L = 28.8 mH, R_G = 25 W, I_AR = 3.5 A
Note 3: Repetitive rating; pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-08-09