2SK3079A_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type 470 MHz Band Amplifier Applications

2SK3079A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment
• Output power: P_o = 33.50dBmW (2.2 W) (min)
• Gain: G_p = 13.50dB (min)
• Drain Efficiency: ηD = 50.0% (min)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
10
V
Gate-source voltage
V_GSS
3
V
Drain current
I_D
3
A
Power dissipation
P_D (Note 1)
20.0
W
Channel temperature
Storage temperature range
T_ch
150
°C
T_stg
−45~150
°C
JEDEC
―
Note:
Using continuously under heavy loads (e.g. the application of
JEITA
―
high temperature/current/voltage and the significant change in
TOSHIBA
2-5N1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.08 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C (When mounted on a 1.6 mm glass epoxy PCB)
Marking
Type Name
UD F
**
Dot
Lot No.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01