2SK3079A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

2SK3079A
Preliminary ^{TOSHIBA Field Effect Transistor Silicon N Channel MOS Type}
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm
· Output power: Po = 33.50dBmW (2.2 W) (min)
· Gain: Gp = 13.50dB (min)
· Drain Efficiency: ηD = 50.0% (min)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note 1: Tc = 25°C
Symbol
Rating
Unit
V_DSS
10
V
V_GSS
3
V
I_D
3
A
P_D (Note 1)
20.0
W
T_ch
150
°C
T_stg
−45~150
°C
Marking
Type Name
JEDEC
JEITA
TOSHIBA
―
―
2-5N1A
UD F
**
Dot
Lot No.
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 2)
P_O
η_D
G_p
V_th
I_DSS
I_GSS
¾
V_DS = 4.5 V, Iidle = 50 mA
(V_GS = adjust)
f = 470 MHz, P_i = 20dBmW
Z_G = Z_L = 50 Ω
V_DS = 4.5 V, I_D = 0.5 mA
V_DS = 10 V, V_GS = 0 V
V_GS = 5 V, V_DS = 0 V
V_DS = 5 V, f = 470 MHz,
P_i = 20dBmW,
P_o = 33.5dBmW (V_GS = adjust)
VSWR LOAD 10:1 all phase
33.5 ¾
50.0 ¾
13.5 ¾
¾
0.8
¾
¾
¾
¾
¾ dBmW
¾
%
¾
dB
¾
V
10
µA
5
µA
No degradation
¾
Caution: This is transistor the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
1
2002-01-09