2SK3078A_07 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Silicon N Channel MOS Type VHF/UHF Band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A
VHF/UHF Band Amplifier Applications
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These
TOSHIBA products are neither intended nor warranted for any other
use.Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
2SK3078A
Unit: mm
• Output power: P_o ≥ 28.0dBmW
• Gain: G_p ≥ 8.0dB
• Drain Efficiency: ηD ≥ 50%
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
V_DSS
10
V
V_GSS
5
V
I_D
0.5
A
P_D (Note 1)
3
W
T_ch
150
°C
T_stg
−45~150
°C
JEDEC
JEITA
―
SC-62
Note:
Using continuously under heavy loads (e.g. the application of
TOSHIBA
2-5K1D
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.05 g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C
Marking
Part No. (or abbreviation code)
UW
Lot No.
123
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01