2SK3078A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3078A
2SK3078A
VHF/UHF Band Amplifier Applications
Unit: mm
· Output power: Po ≥ 28.0dBmW
· Gain: Gp ≥ 8.0dB
· Drain Efficiency: ηD ≥ 50%
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Note 1: Tc = 25°C
Symbol
Rating
Unit
V_DSS
10
V
V_GSS
5
V
I_D
0.5
A
P_D (Note 1)
3
W
T_ch
150
°C
T_stg
−45~150
°C
Marking
UW
JEDEC
JEITA
TOSHIBA
―
SC-62
2-5K1D
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 2)
P_O
ηD
G_p
V_th
I_DSS
I_GSS
¾
V_DS = 4.5 V, Iidle = 50 mA
(V_GS = adjust)
f = 470 MHz, P_i = 20dBmW
Z_G = Z_L == 50 Ω
V_DS = 4.8 V, I_D = 0.5 mA
V_DS = 10 V, V_GS = 0 V
V_GS = 5 V, V_DS = 0 V
V_DS = 6.5 V, f = 470 MHz,
P_i = 20dBmW,
P_o = 28.0dBmW (V_GS = adjust)
VSWR LOAD 10:1 all phase
28.0 ¾
¾ dBmW
50
¾
¾
%
8.0
¾
¾
dB
0.20
¾
1.20
V
¾
¾
10
µA
¾
¾
5
µA
No degradation
¾
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 2: When the RF output power test fixture is used
1
2002-01-09