2SK3078 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

2SK3078
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3078
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Output Power
Gain
Drain Efficiency
: PO = 27.0 dBmW (Min.)
: GP = 12.5 dB (Min.)
: ηD = 46% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D
P_D*
T_ch
T_stg
10
5
0.5
3.0
150
−45~150
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
UNIT
V
V
A
W
°C
°C
JEDEC
EIAJ
TOSHIBA
Unit: mm
—
SC−62
2−5K1D
000707EAA1
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2001-02-02 1/3