2SK3077_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)

2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
(Note)The TOSHIBA products listed in this document are intended for
high frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for
high frequency Power Amplifier of telecommunications equipment.
z Output Power
z Gain
z Drain Efficiency
: P_O = 15.0 dBmW (Min.)
: G_P = 15.0 dB (Min.)
: η_D = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation
Channel Temperature
Storage Temperature Range
V_DSS
V_GSS
I_D
P_D*
T_ch
T_stg
10
5
0.1
250
150
−45~150
*: Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
UNIT
V
V
A
mW
°C
°C
MARKING
JEDEC
JEITA
TOSHIBA
Unit: mm
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2−2K1D
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2007-2-19