2SK3077A Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – VHF/UHF Band Amplifier Applications

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
2SK3077A
VHF/UHF Band Amplifier Applications
Unit: mm
· Output power: Po ≥ 20.5dBmW
· Gain: Gp ≥ 10.5dB
· Drain Efficiency: ηD ≥ 50%
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DSS
V_GSS
I_D
P_D
T_ch
T_stg
10
V
5
V
0.1
A
0.1
W
150
°C
−45~150
°C
Marking
4
3
WA
1, 3 Source
2 Gate
4 Drain
1
2
JEDEC
JEITA
TOSHIBA
―
―
2-2K1D
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Output power
Drain efficiency
Power gain
Threshold voltage
Drain cut-off current
Gate-source leakage current
Load mismatch
(Note 1)
P_O
η_D
G_P
V_th
I_DSS
I_GSS
¾
V_DS = 4.5 V, Iidle = 20 mA
(V_GS = adjust)
f = 470 MHz, P_i = 10dBmW
V_DS = 4.8 V, I_D = 0.5 mA
V_DS = 10 V, V_GS = 0 V
V_GS = 5 V, V_DS = 0 V
V_DS = 6.5 V, f = 470 MHz,
P_i = 10dBmW,
P_o = 20.5dBmW (V_GS = adjust)
VSWR LOAD 10:1 all phase
20.5 ¾
¾ dBmW
50
¾
¾
%
10.5 ¾
¾
dB
0.25
¾
1.25
V
¾
¾
10
µA
¾
¾
5
µA
No degradation
¾
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 1: When the RF output power test fixture is used
1
2002-01-09