2SK3075_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

2SK3075
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3075
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment. These
TOSHIBA products are neither intended nor warranted for any other use.
Do not use these TOSHIBA products listed in this document except for high
frequency Power Amplifier of telecommunications equipment.
Unit: mm
z Output Power
z Power Gain
z Drain Efficiency
: P_O ≥ 7.5W
: G_P ≥ 11.7dB
: η_D ≥ 50%
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
25
V
Drain Current
I_D
5
A
Drain Power Dissipation
Channel Temperature
Storage Temperature Range
P_D*
20
W
JEDEC
—
T_ch
150
°C
JEITA
—
T_stg
−45~150
°C
TOSHIBA
2−5N1A
Weight: 0.08 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
1
2007-11-01