2SK3074_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – SILICON N CHANNEL MOS TYPE RF POWER MOSFET FOR VHF−AND UHF-BAND POWER AMPLIFIER

2SK3074
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3074
RF POWER MOSFET
FOR VHF−AND UHF-BAND POWER AMPLIFIER
(Note)The TOSHIBA products listed in this document are intended for high
frequency Power Amplifier of telecommunications equipment.These TOSHIBA
products are neither intended nor warranted for any other use.Do not use
these TOSHIBA products listed in this document except for high frequency
Power Amplifier of telecommunications equipment.
Unit in mm
z Output Power
z Power Gain
z Drain Efficiency
: P_O ≥ 630mW
: G_P ≥ 14.9dB
: η_D ≥ 45%
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V_DSS
30
V
Gate-Source Voltage
V_GSS
25
V
Drain Current
I_D
1
A
Drain Power Dissipation
P_D (Note 1)
3
W
JEDEC
—
Channel Temperature
T_ch
150
°C
JEITA
SC−62
Storage Temperature Range
T_stg
−45~150
°C
TOSHIBA
2−5K1D
Weight: 0.05 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tc = 25°C When mounted on a 1.6mm glass epoxy PCB
MARKING
Part No. (or abbreviation code)
WA
Lot No.
123
1. Gate
2. Source
3. Drain
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Caution: This device is sensitive to electrostatic discharge.
Please make enough tool and equipment earthed when you handle.
1
2007-11-01