2SK3068_10 Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Chopper Regulator DC−DC Converter, and Motor Drive Applications

2SK3068
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3068
Chopper Regulator DC−DC Converter, and Motor Drive
Applications
Unit: mm
z Low drain−source ON-resistance
: R_{DS (ON)} = 0.4 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 9.0 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 500 V)
z Enhancement mode
: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
V_DSS
V_DGR
V_GSS
I_D
I_DP
P_D
E_AS
500
V
500
V
±30
V
12
A
48
A
100
W
364
mJ
Avalanche current
I_AR
Repetitive avalanche energy (Note 3)
E_AR
Channel temperature
T_ch
Storage temperature range
T_stg
12
A
10
mJ
150
°C
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.)
may cause this product to decrease in the reliability significantly even if the
operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings. Please design the appropriate reliability
upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data
(i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
R_{th (ch−c)}
R_{th (ch−a)}
1.25
°C / W
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.3 mH, R_G = 25 Ω, I_AR = 12 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
2010-04-13