2SK3067_09 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Chopper Regulator, DC−DC Converter and Motor Drive

2SK3067
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3067
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance
: R_{DS (ON)} = 4.2 Ω (typ.)
z High forward transfer admittance
: |Y_fs| = 1.7 S (typ.)
z Low leakage current
: I_DSS = 100 μA (max) (V_DS = 600 V)
z Enhancement mode
: V_th = 2.0 to 4.0 V (V_DS = 10 V, I_D = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 μs)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
600
V
±30
V
2
A
5
A
8
A
25
W
93
mJ
2
A
2.5
mJ
150
°C
−55 to 150
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Max
Unit
Thermal reverse, channel to case
Thermal reverse, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
5.0
°C / W
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 41 mH, R_G = 25 Ω, I_AR = 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29