2SK3067 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Chopper Regulator

2SK3067
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3067
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 4.2 Ω (typ.)
l High forward transfer admittance : |Yfs| = 1.7 S (typ.)
l Low leakage current
: IDSS = 100 µA (max) (VDS = 600 V)
l Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (R_GS = 20 kΩ)
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (t = 1 ms)
(Note 1)
Pulse (t = 100 µs)
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
V_DSS
V_DGR
V_GSS
I_D
I_DP
I_DP
P_D
E_AS
I_AR
E_AR
T_ch
T_stg
600
V
600
V
±30
V
2
A
5
A
8
A
25
W
93
mJ
2
A
2.5
mJ
150
°C
−55~150
°C
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Max
Unit
Thermal reverse, channel to case
Thermal reverse, channel to ambient
R_{th (ch−c)}
R_{th (ch−a)}
5.0
°C / W
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 41 mH, R_G = 25 Ω, I_AR = 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-06-05